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ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
—
STEALTH? Diode
Package Marking and Ordering Information
Electrical Characteristics TC
= 25
°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
PD
Power Dissipation
150
W
EAVL
Avalanche Energy (1
A,
40
mH)
20
mJ
TJ, TSTG
Operating and Storage Temperature Range
-55 to 175
°C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings”
may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Symbol
Parameter
Test Conditions
Min Typ Max
Unit
IR
Instantaneous Reverse Current
VR
= 600
V
TC
= 25
°C - - 100
μA
TC
= 125
°C--1.0mA
VF
Instantaneous Forward Voltage
IF = 15
A
TC
= 25
°C-1.82.2V
TC
= 125
°C - 1.65 2.0 V
CJ
Junction Capacitance
VR = 10
V,
I
F
= 0
A
- 62 - pF
trr
Reverse Recovery Time
IF
= 1
A,
d
iF/dt
=
100
A/μR
= 30
V
- 25 30 ns
s,
V
IF=15
A,
d
iF/dt
=
100
A/μR
= 30
V
- 35 40 ns
s,
V
trr
Reverse Recovery Time
IF
= 15
A,
- 29.4 - ns
diF/dt
= 200
A/μ- 3.5 - A
s,
VR
= 390
V,
T
C
= 25°C
- 57 - nC
Irr
Reverse Recovery
C
urrent
Qrr
Reverse Recovered Charge
trr
Reverse Recovery Time
IF
= 15
A,
-90-ns
)-diF/dt
= 200
A/μ2.0-s,
C
urrent
VR
= 390
V,
- 5.0 - A
TC
= 125°C
S Softness Factor (tb/ta
Reverse Recovery
Reverse Recovered Charge
- 275 - nC
trr
Reverse Recovery Time
IF
= 15
A,
-52-ns
diF/dt
= 800
A/μ- 1.36 -
s,
VR
= 390
V,
- 13.5 - A
TC
= 125°C
S Softness Factor (tb/ta)
Reverse Recovery
C
urrent
Reverse Recovered Charge
- 390 - nC
diM/dt
Maximum di/dt during tb
- 800 - A/μs
RθJC
Thermal Resistance Junction to Case
- - 1.0
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-247
- - 30
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220
- - 62
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-262
- - 62
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-263
- - 62
°C/W
Symbol
Parameter
Ratings
Unit
Irr
Qrr
Irr
Qrr
?2001 Fairchild Semiconductor Corporation
ISL9R1560P2, ISL9R1560G2,
ISL9R1560S2, ISL9R1560S3S Rev. C1
www.fairchildsemi.com
2
Part Number Top Mark
Package
Packing Method Reel Size Tape Width Quantity
ISL9R1560G2
ISL9R1560G2
TO-247-2L
Tube
N/A
N/A
30
ISL9R1560P2
ISL9R1560P2
TO-220AC-2L
Tube
N/A
N/A
50
ISL9R1560S2
ISL9R1560S2
TO-262(I2-PAK)
Tube
N/A
N/A
50
ISL9R1560S3ST
ISL9R1560S3S
TO-263(D2-PAK)
Reel
13" dia
24mm
800
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相关代理商/技术参数
ISL9R1560G2_Q
功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R1560P2
功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R1560P2_Q
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ISL9R1560PF2
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ISL9R1560S3ST
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ISL9R1560S3ST_Q
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